 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Advance Product Information August 27, 2003 33-36 GHz 2W Power Amplifier Key Features * * * * * * TGA1141-EPU 0.25 um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB, Psat 33dBm @ 6V , 34dBm @7V Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat Chip Dimensions 4.13 x 3.30 x 0.1 mm Primary Applications Bias Conditions: Vd = 6 V, Id = 880 mA 22 * * * Military Radar Systems Ka Band Sat-Com Point-to-Point Radio 20 Small-signal Gain (dB) 18 16 14 12 10 30 32 34 36 38 40 Frequency (GHz) 35 34 33 32 Pout (dBm) 31 30 29 28 27 26 25 32 33 34 35 Frequency (GHz) 36 37 P1dB_ave Psat_ave Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information August 27, 2003 TGA1141-EPU TABLE I MAXIMUM RATINGS Symbol V V + - Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Value 8V -5V TO 0V Notes 2/ 2/ 2/, 3/ 2/ 4/, 5/ I + Positive Supply Current Gate Supply Current 1.76 A 70 mA | IG | PD PIN TCH TM TSTG Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature 9.4 W 27 dBm 150 C 320 C -65 C to 150 C 1/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device. Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70 C, the median life is 1 E+6 hours. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 5/ TABLE II DC PROBE TESTS (T A = 25 C, Nominal) Symbol Idss Gm VP B VGS B VGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage gatesource Breakdown Voltage gatedrain Minimum 40 88 -1.5 -30 -30 Maximum 188 212 -0.5 -8 -8 Value mA mS V V V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information August 27, 2003 TGA1141-EPU TABLE III ON-WAFER RF PROBE CHARACTERISTICS (TA = 25 C, Nominal) Vd = 6 V, Id = 880 mA Symbol Gain Parameter Small Signal Gain Input Return Loss Output Return Loss Output Power @ Pin = +21 dBm Peak LS Drain Current @ Pin = 21 dBm Test Condition F = 33 - 36 GHz F = 34 - 35.2 GHz F = 33 - 36 GHz F = 33 - 36 GHz F = 34 - 34.6 Hz F = 35.2 GHz F = 34 - 35.2 GHz Limit Min Typ Max 17 --16 ------32 31.5 ---8 -6.5 --------1.6 Units dB IRL ORL PWR Ipk dB dB dBm A TABLE IV THERMAL INFORMATION Parameter Test Conditions TCH o ( C) 115 RJC (C/W) 8.5 TM (HRS) 2.6 E+7 Vd = 6 V RJC Thermal Id = 880 mA Resistance (channel to backside of Pdiss = 5.3 W carrier) Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information August 27, 2003 TGA1141-EPU Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 880 mA 22 20 Small-signal Gain (dB) 18 16 14 12 10 30 32 34 36 38 40 Frequency (GHz) 0 -2 Input & Output Return Loss (dB) -4 -6 S11 -8 S22 -10 -12 -14 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information August 27, 2003 Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 880 mA 35 34 33 32 Pout (dBm) 31 30 29 28 27 26 25 32 33 P1dB_ave Psat_ave TGA1141-EPU Pout ( 30 28 26 24 PAE (%) 22 20 18 16 14 12 10 32 35 34.5 34 33.5 Pout (dBm) 33 32.5 32 31.5 31 30.5 30 32 33 34 35 Frequency ) (GHz) 36 37 PAE PAE@P1dB PAE@Psat 33 34 35 36 37 Frequency (GHz) +6V +7V Psat vs Vd 34 35 36 37 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information August 27, 2003 TGA1141-EPU Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 880 mA 35 33 31 29 Pout (dBm) 27 25 23 21 19 17 15 0 5 10 Pin (dBm ) 15 20 25 20 19 18 17 Gain (dB) 16 15 14 13 12 11 10 Pout +25C Pout +100C Pout -26C Gain +25C Gain +100C Gain -26C Pout vs. Temperature Data Summary Matrix: T= -26C T= +25C T= +100C Freq (GHz) min Pout mean Pout min Pout mean Pout min Pout mean Pout 34 33 33 32.7 32.8 31.9 32 34.6 32.8 32.9 32.5 32.6 31.7 31.8 35.2 32.5 32.7 32.3 32.4 31.5 31.6 Ave. Pout (dBm) 32.8 32.9 32.5 32.6 31.7 31.8 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information August 27, 2003 TGA1141-EPU Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information August 27, 2003 TGA1141-EPU Mechanical Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information August 27, 2003 TGA1141-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com |
Price & Availability of TGA1141-EPU
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |